Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides
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Galbiati, Marta; Tatay Aguilar, Sergio; Dubois, Simon M.-M.; Godel, Florian; Galceran, Regina; Mañas Valero, Samuel; Piquemal-Banci, M.; Vecchiola, Aymeric; Charlier, Jean-Christophe; Forment Aliaga, Alicia; Coronado Miralles, Eugenio; Dlubak, Bruno; Seneor, Pierre
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Aquest document és un/a article, creat/da en: 2019
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Experimental studies on spin valves with exfoliated 2D materials face the main technological issue of ferromagnetic electrode oxidation during the 2Ds integration process. As a twofold outcome, magnetoresistance (MR) signals are very difficult to obtain and, when they finally are, they are often far from expectations. We propose a fabrication method to circumvent this key issue for 2D-based spintronics devices. We report on the fabrication of NiFe/MoS2/Co spin valves with mechanically exfoliated multilayer MoS2 using an in situ fabrication protocol that allows high-quality nonoxidized interfaces to be maintained between the ferromagnetic electrodes and the 2D layer. Devices display a large MR of 5%. Beyond interfaces and material quality, we suggest that an overlooked more fundamental physics issue related to spin-current depolarization could explain the limited MR observed so far in MoS2-based magnetic tunnel junctions. This points to a path towards the observation of larger spin signals in line with theoretical predictions above 100%. We envision the impact of our work to be beyond MoS2 and its broader transition-metal dichalcogenides family by opening the way to an accelerated screening of other 2D materials that are yet to be explored for spintronics.
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