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Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides

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Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides

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dc.contributor.author	Galbiati, Marta
dc.contributor.author	Tatay Aguilar, Sergio
dc.contributor.author	Dubois, Simon M.-M.
dc.contributor.author	Godel, Florian
dc.contributor.author	Galceran, Regina
dc.contributor.author	Mañas Valero, Samuel
dc.contributor.author	Piquemal-Banci, M.
dc.contributor.author	Vecchiola, Aymeric
dc.contributor.author	Charlier, Jean-Christophe
dc.contributor.author	Forment Aliaga, Alicia
dc.contributor.author	Coronado Miralles, Eugenio
dc.contributor.author	Dlubak, Bruno
dc.contributor.author	Seneor, Pierre
dc.date.accessioned	2020-04-21T11:38:07Z
dc.date.available	2020-04-21T11:38:07Z
dc.date.issued	2019
dc.identifier.citation	Galbiati, Marta Tatay Aguilar, Sergio Dubois, Simon M.-M. Godel, Florian Galceran, Regina Mañas Valero, Samuel Piquemal-Banci, M. Vecchiola, Aymeric Charlier, Jean-Christophe Forment Aliaga, Alicia Coronado Miralles, Eugenio Dlubak, Bruno Seneor, Pierre 2019 Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides Physical Review Applied 12 4 044022-1 044022-7
dc.identifier.uri	https://hdl.handle.net/10550/73962
dc.description.abstract	Experimental studies on spin valves with exfoliated 2D materials face the main technological issue of ferromagnetic electrode oxidation during the 2Ds integration process. As a twofold outcome, magnetoresistance (MR) signals are very difficult to obtain and, when they finally are, they are often far from expectations. We propose a fabrication method to circumvent this key issue for 2D-based spintronics devices. We report on the fabrication of NiFe/MoS2/Co spin valves with mechanically exfoliated multilayer MoS2 using an in situ fabrication protocol that allows high-quality nonoxidized interfaces to be maintained between the ferromagnetic electrodes and the 2D layer. Devices display a large MR of 5%. Beyond interfaces and material quality, we suggest that an overlooked more fundamental physics issue related to spin-current depolarization could explain the limited MR observed so far in MoS2-based magnetic tunnel junctions. This points to a path towards the observation of larger spin signals in line with theoretical predictions above 100%. We envision the impact of our work to be beyond MoS2 and its broader transition-metal dichalcogenides family by opening the way to an accelerated screening of other 2D materials that are yet to be explored for spintronics.
dc.language.iso	eng
dc.relation.ispartof	Physical Review Applied, 2019, vol. 12, num. 4, p. 044022-1-044022-7
dc.subject	Metalls de transició
dc.subject	Nanotecnologia
dc.subject	Física
dc.title	Path to overcome material and fundamental obstacles in spin valves based on Mo S2 and other transition-metal dichalcogenides
dc.type	journal article	es_ES
dc.date.updated	2020-04-21T11:38:07Z
dc.identifier.doi	10.1103/PhysRevApplied.12.044022
dc.identifier.idgrec	134891
dc.rights.accessRights	open access	es_ES