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Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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Valencià Castellano

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IMPORTANT: Aquest repositori està en una versió antiga des del 3/12/2023. La nova instal.lació está en https://roderic.uv.es/

Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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Kern, Lisa-Marie; Galceran, Regina; Zatko, V.; Galbiati, Marta; Godel, Florian; Perconte, D.; Bouamrane, F.; Gaufrès, E.; Loiseau, A.; Brus, P.; Bezencenet, O.; Martin, M.-B.; Servet, B.; Petroff, F.; Dlubak, Bruno; Seneor, Pierre

Aquest document és un/a article, creat/da en: 2019

We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices.

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