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Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

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dc.contributor.author	Kern, Lisa-Marie
dc.contributor.author	Galceran, Regina
dc.contributor.author	Zatko, V.
dc.contributor.author	Galbiati, Marta
dc.contributor.author	Godel, Florian
dc.contributor.author	Perconte, D.
dc.contributor.author	Bouamrane, F.
dc.contributor.author	Gaufrès, E.
dc.contributor.author	Loiseau, A.
dc.contributor.author	Brus, P.
dc.contributor.author	Bezencenet, O.
dc.contributor.author	Martin, M.-B.
dc.contributor.author	Servet, B.
dc.contributor.author	Petroff, F.
dc.contributor.author	Dlubak, Bruno
dc.contributor.author	Seneor, Pierre
dc.date.accessioned	2020-06-05T09:23:52Z
dc.date.available	2020-06-05T09:23:52Z
dc.date.issued	2019
dc.identifier.citation	Kern, Lisa-Marie Galceran, Regina Zatko, V. Galbiati, Marta Godel, Florian Perconte, D. Bouamrane, F. Gaufrès, E. Loiseau, A. Brus, P. Bezencenet, O. Martin, M.-B. Servet, B. Petroff, F. Dlubak, Bruno Seneor, Pierre 2019 Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform Applied Physics Letters 114 053107
dc.identifier.uri	https://hdl.handle.net/10550/74902
dc.description.abstract	We demonstrate a stabilized black phosphorus (BP) 2D platform thanks to an ultrathin MgO barrier, as required for spintronic device integration. The in-situ MgO layer deposition is achieved by using a large-scale atomic layer deposition process with high nucleation density. Raman spectroscopy studies show that this layer protects the BP from degradation in ambient conditions, unlocking in particular the possibility to carry out usual lithographic fabrication steps. The resulting MgO/BP stack is then integrated in a device and probed electrically, confirming the tunnel properties of the ultrathin MgO contacts. We believe that this demonstration of a BP material platform passivated with a functional MgO tunnel barrier provides a promising perspective for BP spin transport devices.
dc.language.iso	eng
dc.relation.ispartof	Applied Physics Letters, 2019, vol. 114, num. 053107
dc.subject	Materials
dc.subject	Espectroscòpia Raman
dc.title	Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform
dc.type	journal article	es_ES
dc.date.updated	2020-06-05T09:23:53Z
dc.identifier.doi	10.1063/1.5086840
dc.identifier.idgrec	139352
dc.rights.accessRights	open access	es_ES