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WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits

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WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits

dc.contributor.author	Godel, Florian
dc.contributor.author	Zatko, V.
dc.contributor.author	Carrétéro, C.
dc.contributor.author	Sander, Anke
dc.contributor.author	Galbiati, Marta
dc.contributor.author	Vecchiola, Aymeric
dc.contributor.author	Brus, P.
dc.contributor.author	Bezencenet, O.
dc.contributor.author	Servet, B.
dc.contributor.author	Martin, M.-B.
dc.contributor.author	Dlubak, Bruno
dc.contributor.author	Seneor, Pierre
dc.date.accessioned	2021-04-28T16:31:59Z
dc.date.available	2021-04-28T16:31:59Z
dc.date.issued	2020
dc.identifier.citation	Godel, Florian Zatko, V. Carrétéro, C. Sander, Anke Galbiati, Marta Vecchiola, Aymeric Brus, P. Bezencenet, O. Servet, B. Martin, M.-B. Dlubak, Bruno Seneor, Pierre 2020 WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits ACS Applied Nano Materials 3 8 7908 7916
dc.identifier.uri	https://hdl.handle.net/10550/78966
dc.description.abstract	We report on the achievement of a large-scale tungsten disulfide (WS2) 2D semiconducting platform derived by pulsed-laser deposition (PLD) on both insulating substrates (SrTiO3), as required for in-plane semiconductor circuit definition, and ferromagnetic spin sources (Ni), as required for spintronics applications. We show thickness and phase control, with highly homogeneous wafer-scale monolayers observed under certain conditions, as demonstrated by X-ray photoelectron spectroscopy and Raman spectroscopy mappings. Interestingly, growth appears to be dependent on the substrate selection, with a dramatically increased growth rate on Ni substrates. We show that this 2D-semiconductor integration protocol preserves the interface integrity. Illustratively, the WS2/Ni electrode is shown to be resistant to oxidation (even after extended exposure to ambient conditions) and to present tunneling characteristics once integrated into a complete vertical device. Overall, these experiments show that the presented PLD approach used here for WS2 growth is versatile and has a strong potential to accelerate the integration and evaluation of large-scale 2D-semiconductor platforms in electronics and spintronics circuits.
dc.language.iso	eng
dc.relation.ispartof	ACS Applied Nano Materials, 2020, vol. 3, num. 8, p. 7908-7916
dc.subject	Nanotecnologia
dc.subject	Semiconductors
dc.subject	Espectroscòpia Raman
dc.title	WS2 2D Semiconductor Down to Monolayers by Pulsed-Laser Deposition for Large-Scale Integration in Electronics and Spintronics Circuits
dc.type	journal article	es_ES
dc.date.updated	2021-04-28T16:32:00Z
dc.identifier.doi	10.1021/acsanm.0c01408
dc.identifier.idgrec	146198
dc.rights.accessRights	open access	es_ES