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Navarro, E.A.; Hernández, María Ángeles; Andrés, Miguel V.; Segura García del Río, Alfredo; Muñoz Sanjosé, Vicente | |||
Aquest document és un/a article, creat/da en: 1996 | |||
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A numerical approach to studying thermally induced optical nonlinearity in semiconductors is presented. A transient finite difference algorithm is applied to solve the thermal diffusion equation coupled with the nonlinear absorbance-transmittance of Au/GaSe/Au samples with an applied electric field. The presented analysis can deal with any arbitrary axisymmetric dependence of the input power over the sample and external electric field, and provides information about the steady state and transitory effects in the transmittance. | |||
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