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Unstable behaviour of normally-off GaN E-HEMT under short-circuit

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Unstable behaviour of normally-off GaN E-HEMT under short-circuit

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dc.contributor.author	Martínez, Pedro J.
dc.contributor.author	Maset Sancho, Enrique
dc.contributor.author	Gilabert Palmer, David
dc.contributor.author	Sanchis Kilders, Esteban
dc.contributor.author	Esteve Gómez, Vicente
dc.contributor.author	Jordán Martínez, José
dc.contributor.author	Ejea Martí, Juan Bautista
dc.contributor.author	Ferreres Sabater, Agustín
dc.date.accessioned	2023-11-24T15:03:18Z
dc.date.available	2023-11-24T15:03:18Z
dc.date.issued	2018
dc.identifier.uri	https://hdl.handle.net/10550/91426
dc.description.abstract	The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.
dc.language.iso	eng
dc.relation.ispartof	Semiconductor Science and Technology, 2018, vol. 33, num. 4, p. 1-8
dc.source	Martínez, Pedro J., Maset Sancho, Enrique, Gilabert Palmer, David, Sanchis Kilders, Esteban Esteve Gómez, Vicente, Jordán Martínez, José, Martí, Juan Bautista, Ferreres Sabater, Agustín (2018). Unstable behaviour of normally-off GaN E-HEMT under short-circuit. Semiconductor Science and Technology 33 4 1 8. https://doi.org/10.1088/1361-6641/aab078
dc.subject	enginyeria elèctrica
dc.title	Unstable behaviour of normally-off GaN E-HEMT under short-circuit
dc.type	journal article
dc.date.updated	2023-11-24T15:03:18Z
dc.identifier.doi	10.1088/1361-6641/aab078
dc.identifier.idgrec	132450
dc.rights.accessRights	open access